?2002 fairchild semiconductor corporation rev. b1, april 2002 KSK595 si n-channel junction fet absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter ratings units v gdo gate-drain voltage -20 v i g gate current 10 ma i d drain current 1 ma p d power dissipation 100 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv gdo gate-drain breakdown voltage i g = -100ua -20 v v gs (off) gate-source cut-off voltage v ds =5v, i d =1 a -0.6 -1.5 v i dss drain current v ds =5v, v gs =0 150 350 a ly fs l forward transfer admittance v ds =5v, v gs =0, f=1mhz 0.4 1.2 ms c iss input capacitance v ds =5v, v gs =0, f=1mhz 3.5 pf c rss output capacitance v ds =5v, v gs =0, f=1mhz 0.65 pf KSK595 capacitor microphone applications ? especially suited for use in audio, telephone capacitor microphones ? excellent voltage characteristic ? excellent transient characteristic 1.drain 2. source 3. gate sot-23 1 2 3
?2002 fairchild semiconductor corporation rev. b1, april 2002 KSK595 specified test circuit t a =25 c unless otherwise noted symbol parameter test condition min. typ. max. units g v voltage gain v in =10mv, f=1khz -3 db ? g v v reduced voltage characteristic v in =10mv, f=1khz v cc =4.5v 1.5v -1.2 -3.5 db ? g v f frequency characteristic f=1khz to 110hz -1 db z in input resistance f=1khz 25 m ? z o output resistance f=1khz 700 ? thd total harmonic distortion v in =30mv, f=1khz 1 % v no output noise voltage v in =0, a curve -110 db c in =15p v vtvm osc r l =1k thd a + 33u v cc =4.5v v cc =1.5v b 1k
?2002 fairchild semiconductor corporation KSK595 rev. b1, april 2002 typical characteristics figure 1. figure 2. figure 3. figure 4. figure 5. figure 6. 012345678910 0 50 100 150 200 250 300 350 400 450 500 v gs = -0.3v i dss = 200 a v gs = 0 v gs = -0.1v v gs = -0.2v v gs = -0.4v i d [ a], drain current v ds [v], drain-source voltage -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds = 5v i d [ma], drain current v gs [v], gate-source voltage 0.1 1 0.1 1 10 - - - v ds = 5v i d = 1 a v gs (off)[v], gate-source cut-off voltage i dss [ma], drain current 012345678910 0 100 200 300 400 500 600 700 800 900 1000 v gs = -0.6v v gs = -0.5v i d [ a], drain current v ds [v], drain-source voltage i dss = 500 a v gs = -0.4v v gs = -0.3v v gs = -0.2v v gs = -0.1v v gs = 0 0.1 1 0.1 1 10 v ds = 5v v gs = 0 f=1khz lfsl [ms], forward transfer admittance i dss [ma], drain current 110 1 10 100 c iss [pf], input capacitance v ds [v], drain-source voltage
?2002 fairchild semiconductor corporation KSK595 rev. b1, april 2002 typical characteristics (continued) figure 7. figure 8. figure 9. figure 10. figure 11. figure 12. 110 0.1 1 10 v gs = 0 f = 1mhz c rss [pf], output capacitance v ds [v], drain-source voltage 10 100 1000 -120 -118 -116 -114 -112 -110 v no :v cc =4.5v v i = 0, a curve r l = 1k ? i dss :v ds =5v v no [db], output noise voltage i dss [ a], drain current 10 100 1000 26 28 30 32 34 36 z i :v cc =4.5v v in = 10mv f = 1khz i dss :v ds =5v z i [m ? ], input resistance i dss [ a], drain current 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 p c [mw], power dissipation t a [ o c], ambient temperature 10 100 1000 200 300 400 500 600 700 z o :v cc =4.5v v in = 10mv f = 1khz i dss :v ds =5v z o [ ? ], output resistance i dss [ a], drain current 100 1000 1 10 100 thd:v cc = 4.5v v in = 30mv f = 1khz i dss :v ds = 5v thd[%], total harmonic distortion i dss [ a], drain current
?2002 fairchild semiconductor corporation KSK595 rev. b1, april 2002 typical characteristics (continued) figure 13. figure 14. figure 15. 10 100 1000 -6 -4 -2 0 2 4 ? g v v:v cc = 4.5v 1.5v v in = 10mv f = 1khz i dss :v ds =5v ? g v v - i dss [db], reduced voltage characteristic i dss [ a], drain current 0 40 80 120 160 200 240 0.1 1 10 100 i dss = 200 a i dss = 400 a i dss = 100 a thd[%], total harmonic distortion v in [mv], input voltage thd:v cc = 4.5v v in = 30mv f = 1khz i dss :v ds = 5v 10 100 1000 -10 -8 -6 -4 -2 0 2 4 6 8 10 g v :v cc = 4.5v v in = 10mv r l = 1k ? i dss :v ds = 5v g v [db], voltage gain i dss [ a], drain current
0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 package demensions rev. b1, april 2002 KSK595 dimensions in millimeters ?2002 fairchild semiconductor corporation
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